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| hexfet ? power mosfet 04/20/10 irf5805pbf absolute maximum ratings www.irf.com 1 thermal resistance parameter max. units v ds drain-source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.8 i d @ t a = 70c continuous drain current, v gs @ -10v -3.0 a i dm pulsed drain current -15 p d @t a = 25c maximum power dissipation 2w p d @t a = 70c maximum power dissipation 1.28 w linear derating factor 0. 02 w/c v gs gate-to-source voltage 20 v t j , t stg junction and storage temperature range -55 to + 150 c description v dss r ds(on) max i d -30v 0.098@v gs = -10v - 3.8a 0.165@v gs = -4.5v - 3.0a parameter max. units r ja maximum junction-to-ambient 62.5 c/w top view 1 2 d g a d d d s 3 4 5 6 these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the tsop-6 package with its customized leadframe produces a hexfet power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23. ultra low on-resistance p-channel mosfet surface mount available in tape & reel low gate charge lead-free halogen-free tsop-6 pd -95340a
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 19 29 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 16 24 nc di/dt = -100a/s source-drain ratings and characteristics -15 -2.0 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.098 v gs = -10v, i d = -3.8a ??? 0.165 v gs = -4.5v, i d = -3.0a v gs(th) gate threshold voltage -1.0 ??? -2.5 v v ds = v gs , i d = -250a g fs forward transconductance 3.5 ??? ??? s v ds = -10v, i d = -3.8a ??? ??? -15 v ds = -24v, v gs = 0v ??? ??? -25 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 11 17 i d = -3.8a q gs gate-to-source charge ??? 2.3 ??? nc v ds = -15v q gd gate-to-drain ("miller") charge ??? 1.5 ??? v gs = -10v t d(on) turn-on delay time ??? 11 17 v dd = -15v, v gs = -10v t r rise time ??? 14 21 i d = -1.0a t d(off) turn-off delay time ??? 90 135 r g = 6.0 ? t f fall time ??? 49 74 r d = 15 ? c iss input capacitance ??? 511 ??? v gs = 0v c oss output capacitance ??? 79 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 50 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. pulse width 400s duty cycle 2% s d g surface mounted on 1 in square cu board, t 10sec. www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.8a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.5v 20s pulse width tj = 25c vgs top -10.0v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v bottom -2.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.5v 20s pulse width tj = 150c vgs top -10.0v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v bottom -2.5v 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2 4 6 8 10 12 14 0 4 8 12 16 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.8a v = -15v ds v = -24v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d 1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -v gs, gate -to -source voltage (v) 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -3.8a 0 5 10 15 20 -i d , drain current ( a ) 0.000 0.100 0.200 0.300 0.400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = -4.5v vgs = -10v fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 1.7 1.9 2.1 2.3 2.5 - v g s ( t h ) ( v ) i d = -250a typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 5 10 15 20 25 30 p o w e r ( w ) 8 www.irf.com ! " " # " " " " $ " % & ' ( ! ) ) " " *+ ) " ,$ ) " *+ - . / ' 0 1 % 2 ' & 3 ' 4 % 5 6 4 ' ' 6 0 ( ( 3 % 4 / 3 ' 5 ' . / 7 . 8 0 & ' ( ' 0 7 5 ' ' - . / ' 1 ' - % 4 & 3 ' 9 0 5 & / : ; 1 ' 5 0 ( ( 3 % 4 / 3 ' 5 ' . / 7 . 8 0 & ' ( : 4 . 5 ' " " " " note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2010 |
Price & Availability of IRF5805TRPBF
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